Trench shielded planar gate IGBT (TSPG-IGBT) for low loss and robust short-circuit capalibity

Author

Jun Hu ; Bobde, Madhur ; Yilmaz, Hamza ; Bhalla, Anup

Author_Institution

Alpha & Omega Semicond., Sunnyvale, CA, USA

fYear

2013

fDate

26-30 May 2013

Firstpage

25

Lastpage

28

Abstract

A trench shielded planar gate IGBT is proposed in this paper. The unique 3D top cell structure, combining high density trench and low channel density, offers an excellent conduction vs. switching loss trade-off and a significantly better Short-circuit SOA compared to trench IEGTs. Measurements on fabricated devices show a 0.1V lower V_CESAT for the same E_off, and a 2x improvement in short circuit SOA.

Keywords

insulated gate bipolar transistors; short-circuit currents; 3D top cell structure; TSPG-IGBT; conduction loss trade-off; high density trench; low channel density; low loss short-circuit capability; robust short-circuit capability; short-circuit SOA; switching loss trade-off; trench IEGTs; trench shielded planar gate IGBT; Current density; Insulated gate bipolar transistors; Logic gates; Power semiconductor devices; Semiconductor optical amplifiers; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694390

Filename

6694390