Title :
1200V SC(Schottky controlled injection)-diode, an advanced fast recovery concept with high carrier lifetime
Author :
Matsudai, Tomoko ; Ogura, Tsuneo ; Oshino, Yuuichi ; Naijo, Tatsuo ; Kobayashi, Taichi ; Nakamura, Kazutoshi
Author_Institution :
Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, a 1200V novel PiN-diode concept realizing low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature over 175°C has been proposed. To realize these above-mentioned characteristics, this concept of 1200V diode design adopts a combination of flat and linear distribution of carrier concentration from anode side to cathode side and reducing injection efficiency at both sides at forward bias condition. This carrier profile can also realize reduction of voltage ringing effectively at reverse condition. Furthermore, we have successfully obtained high reverse recovery ruggedness combining a new edge termination design with Schottky contact.
Keywords :
Schottky barriers; Schottky diodes; p-i-n diodes; PiN-diode concept; SC diode; Schottky contact; Schottky controlled injection diode; VF; anode side; carrier concentration; carrier lifetime; cathode side; diode design; edge termination design; flat distribution; forward bias condition; linear distribution; low forward voltage drop; low leakage current; low reverse recovery loss; reverse recovery ruggedness; voltage 1200 V; voltage ringing reduction; Anodes; Cathodes; Charge carrier lifetime; Leakage currents; P-i-n diodes; Schottky barriers; Schottky diodes;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694417
