Title :
High-voltage enhancement/Depletion-mode AlGaN/GaN HEMTs on modified SOI substrates
Author :
Qimeng Jiang ; Cheng Liu ; Yunyou Lu ; Chen, Kevin J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay Kowloon, China
Abstract :
High-voltage AlGaN/GaN HEMTs fabricated on a GaN-on-SOI platform were demonstrated. The GaN-on-SOI wafer features III-nitride epi-layers grown by MOCVD on a modified SOI wafer consisting of a p-type (111) Si device layer, a SiO2 buried oxide and a p-type (100) Si handle substrate. Depletion- and enhancementmode HEMTs are monolithically integrated. The Enhancement-mode HEMTs obtained by fluorine plasma implantation technique deliver large ON/OFF current ratio (107), large breakdown voltage (1354 V with floating substrate) and low ON-resistance (3.9 mΩ·cm2). In addition, the impact of the buried oxide on thermal dissipation is estimated by a simple thermal resistance model.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; cooling; electric breakdown; gallium compounds; ion implantation; monolithic integrated circuits; power HEMT; semiconductor growth; silicon-on-insulator; thermal resistance; wide band gap semiconductors; AlGaN-GaN; III-nitride epilayer growth; MOCVD; ON-OFF current ratio; Si; breakdown voltage; buried oxide; fluorine plasma implantation technique; high-voltage enhancement-depletion-mode HEMT; modified SOI wafer substrate; monolithically integrated circuit; p-type device layer; p-type handle substrate; thermal dissipation estimation; thermal resistance model; voltage 1354 V; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Silicon; Substrates; Thermal resistance;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694431
