Title :
Increase of the Robustness of the junction terminations of power devices by a lateral variation of the Emitter Efficiency
Author :
Schulze, H.-J. ; Bauer, J.-G. ; Falck, E. ; Niedernostheide, F.-J. ; Biermann, J. ; Dutemeyer, T. ; Humbel, O. ; Schieber, A.
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
A new diode technology called Emitter Controlled (EC)-HDR (High Dynamic Robustness) that allows a pronounced enhancement in switching safe-operating area has been developed. For the first time, the concept used for this drastic improvement is presented. The same principle has been applied to the Insulated Gate Bipolar Transistor (IGBT).
Keywords :
insulated gate bipolar transistors; power field effect transistors; power semiconductor diodes; robust control; EC-HDR; IGBT; diode technology; emitter controlled high dynamic robustness; insulated gate bipolar transistor; junction termination; lateral variation; power semiconductor device; switching safe-operating area enhancement; Charge carriers; Insulated gate bipolar transistors; Integrated circuits; Junctions; Robustness; Semiconductor diodes; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694435
