DocumentCode :
661574
Title :
Energy and current crowding limits in avalanche operation of IGBTs
Author :
Riccio, M. ; Napoli, E. ; Irace, A. ; Breglio, G. ; Spirito, P.
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy
fYear :
2013
fDate :
26-30 May 2013
Firstpage :
273
Lastpage :
276
Abstract :
The possible different failure modes that limit the maximum avalanche capability during unclamped inductive switching (UIS) in IGBTs is analyzed in this paper. Experimental measurements conducted on different commercial devices show that, at high peak current, the UIS limit moves from energy limitation to current limitation. This current driven failure mode is not well assessed in literature. In this contribution experimental results are provided and discussed with the target of determining experimental fingerprints that highlight different failure modes that affect IGBTs in avalanche operation. Moreover, the electrical waveforms of the UIS experiments are also exploited to provide clear indications on device operation mode.
Keywords :
insulated gate bipolar transistors; IGBT; UIS; current crowding limit; current driven failure mode; current limitation; electrical waveform; energy crowding limit; energy limitation; maximum avalanche capability; peak current; unclamped inductive switching; IP networks; Insulated gate bipolar transistors; Integrated circuit reliability; Microelectronics; Proximity effects; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
ISSN :
1943-653X
Print_ISBN :
978-1-4673-5134-8
Type :
conf
DOI :
10.1109/ISPSD.2013.6694439
Filename :
6694439
Link To Document :
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