DocumentCode
661574
Title
Energy and current crowding limits in avalanche operation of IGBTs
Author
Riccio, M. ; Napoli, E. ; Irace, A. ; Breglio, G. ; Spirito, P.
Author_Institution
Dept. of Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy
fYear
2013
fDate
26-30 May 2013
Firstpage
273
Lastpage
276
Abstract
The possible different failure modes that limit the maximum avalanche capability during unclamped inductive switching (UIS) in IGBTs is analyzed in this paper. Experimental measurements conducted on different commercial devices show that, at high peak current, the UIS limit moves from energy limitation to current limitation. This current driven failure mode is not well assessed in literature. In this contribution experimental results are provided and discussed with the target of determining experimental fingerprints that highlight different failure modes that affect IGBTs in avalanche operation. Moreover, the electrical waveforms of the UIS experiments are also exploited to provide clear indications on device operation mode.
Keywords
insulated gate bipolar transistors; IGBT; UIS; current crowding limit; current driven failure mode; current limitation; electrical waveform; energy crowding limit; energy limitation; maximum avalanche capability; peak current; unclamped inductive switching; IP networks; Insulated gate bipolar transistors; Integrated circuit reliability; Microelectronics; Proximity effects; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location
Kanazawa
ISSN
1943-653X
Print_ISBN
978-1-4673-5134-8
Type
conf
DOI
10.1109/ISPSD.2013.6694439
Filename
6694439
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