• DocumentCode
    661574
  • Title

    Energy and current crowding limits in avalanche operation of IGBTs

  • Author

    Riccio, M. ; Napoli, E. ; Irace, A. ; Breglio, G. ; Spirito, P.

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy
  • fYear
    2013
  • fDate
    26-30 May 2013
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    The possible different failure modes that limit the maximum avalanche capability during unclamped inductive switching (UIS) in IGBTs is analyzed in this paper. Experimental measurements conducted on different commercial devices show that, at high peak current, the UIS limit moves from energy limitation to current limitation. This current driven failure mode is not well assessed in literature. In this contribution experimental results are provided and discussed with the target of determining experimental fingerprints that highlight different failure modes that affect IGBTs in avalanche operation. Moreover, the electrical waveforms of the UIS experiments are also exploited to provide clear indications on device operation mode.
  • Keywords
    insulated gate bipolar transistors; IGBT; UIS; current crowding limit; current driven failure mode; current limitation; electrical waveform; energy crowding limit; energy limitation; maximum avalanche capability; peak current; unclamped inductive switching; IP networks; Insulated gate bipolar transistors; Integrated circuit reliability; Microelectronics; Proximity effects; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
  • Conference_Location
    Kanazawa
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4673-5134-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2013.6694439
  • Filename
    6694439