700V thin SOI-LIGBT with high current capability

Author

Jing Zhu ; Weifeng Sun ; Qinsong Qian ; Lu Cao ; Nailong He ; Sen Zhang

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2013

fDate

26-30 May 2013

Firstpage

119

Lastpage

122

Abstract

The tridimensional channel SOI-LIGBT on 1.5μm thin SOI layer is developed in this paper. The key feature of the device is that there are numerous separated P-body cells located in the emitter region, which can increase the efficient channel width, enhance electron injection and attain a large current capability. The proposed SOI-LIGBT exhibits the current density of 150A/cm², which has an improvement of 150% compared with the conventional structure. The SOI-LIGBT structure can be well applied in high voltage integrated circuit (HVIC).

Keywords

current density; elemental semiconductors; insulated gate bipolar transistors; silicon; silicon-on-insulator; HVIC; Si; current density; electron injection enhance; emitter region; high voltage integrated circuit; numerous separated P-body cell; size 1.5 mum; tridimensional channel thin SOI-LIGBT layer; voltage 700 V; Current density; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Power semiconductor devices; Scanning electron microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694443

Filename

6694443