JFET pinched bootstrap diode (JPBD) without substrate leakage current integration to 120V BCDMOS process

Author

Sunglyong Kim ; Jongjib Kim ; Sunhak Lee ; Hyemi Kim

Author_Institution

Analog Technol. Group, Fairchild Semicond., South Portland, ME, USA

fYear

2013

fDate

26-30 May 2013

Firstpage

135

Lastpage

138

Abstract

A new concept to realize the usage of a high-voltage bootstrap diode without substrate leakage current for 120 V high-side-driver application is proposed and verified by 2D simulation. The combination of high-voltage (HV) JFET and medium-voltage (MV) diode with proper modification to avoid substrate leakage current at forward conduction state and high-blocking voltage at off state for integrated bootstrap operation is proposed. Simulation results showed 130 V of breakdown voltage and 0.79 V of FVD (forward voltage drop) @ 100 A/cm² without substrate leakage current at conduction mode.

Keywords

bootstrap circuits; junction gate field effect transistors; power field effect transistors; semiconductor diodes; 2D simulation; BCDMOS process; JFET pinched bootstrap diode; breakdown voltage; forward conduction state; forward voltage drop; high-blocking voltage; high-side-driver application; high-voltage bootstrap diode; integrated bootstrap operation; medium-voltage diode; substrate leakage current integration; voltage 120 V to 130 V; Anodes; Breakdown voltage; Cathodes; Electric breakdown; Electric potential; JFETs; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694447

Filename

6694447