Design optimization of field-plate assisted RESURF devices

Author

Boksteen, B.K. ; Ferrara, A. ; Heringa, A. ; Steeneken, P.G. ; Koops, G.E.J. ; Hueting, R.J.E.

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2013

fDate

26-30 May 2013

Firstpage

237

Lastpage

240

Abstract

A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials V_FP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.

Keywords

optimisation; power semiconductor devices; semiconductor device models; technology CAD (electronics); 2-D potential distribution; TCAD-verified model; design optimization; drift region; drift region doping; field-plate assisted RESURF devices; mathematical model; nonzero field plate potentials; top-bottom dielectric asymmetry; Dielectrics; Doping; Electric breakdown; Junctions; Mathematical model; Optimization; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694460

Filename

6694460