Title :
Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure
Author :
Peijie Feng ; Koon Hoo Teo ; Oishi, Toshiyuki ; Yamanaka, Koji ; Rui Ma
Author_Institution :
Mitsubishi Electr. Res. Labs., Cambridge, MA, USA
Abstract :
We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage Vth below 2 V at Vds = 0.1 V for all multichannel devices, and a high on-state current Ion (Vgs = Vds = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; E-mode operations; GaN; calibrated TCAD device simulations; device characteristics visualization; double-gate multichannel HEMT; enhancement mode; flexible gate control; multichannel devices; single-gate multichannel high electron mobility transistors; size 0.62 mum; voltage 0.1 V; voltage 4 V; Gallium nitride; HEMTs; III-V semiconductor materials; Logic gates; MODFETs;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694481
