Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure

Author

Peijie Feng ; Koon Hoo Teo ; Oishi, Toshiyuki ; Yamanaka, Koji ; Rui Ma

Author_Institution

Mitsubishi Electr. Res. Labs., Cambridge, MA, USA

fYear

2013

fDate

26-30 May 2013

Firstpage

203

Lastpage

206

Abstract

We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage V_th below 2 V at V_ds = 0.1 V for all multichannel devices, and a high on-state current I_on (V_gs = V_ds = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; E-mode operations; GaN; calibrated TCAD device simulations; device characteristics visualization; double-gate multichannel HEMT; enhancement mode; flexible gate control; multichannel devices; single-gate multichannel high electron mobility transistors; size 0.62 mum; voltage 0.1 V; voltage 4 V; Gallium nitride; HEMTs; III-V semiconductor materials; Logic gates; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694481

Filename

6694481