DocumentCode :
661957
Title :
Silicon-based substrate-integrated waveguide-based tunable band-pass filter using interdigital MEMS capacitor
Author :
Hyunseong Kang ; Sam, S. ; Ik-Jae Hyun ; Chang-Wook Baek ; Sungjoon Lim
Author_Institution :
Sch. of Electr. & Electron. Eng., Coll. of Eng. Chung-Ang Univ., Seoul, South Korea
fYear :
2013
fDate :
5-8 Nov. 2013
Firstpage :
456
Lastpage :
458
Abstract :
A novel method for designing miniaturized tunable BPF filter is proposed on the basis of the SIW technology. By loading MEMS cantilevers on the metal fingers´ surface of the IDC, passband of the filter can be differently generated. The proposed structure allows relatively independent control the center frequency and the coupling coefficient. This filter is showing advantages in terms of compact size, good selectivity and stopband rejection, as well as the easy integration capability with other circuits. The proposed filter has the continuously tuning range between 23.6 GHz and 25.6 GHz with insertion between 4.59 dB to 4.13 dB.
Keywords :
band-pass filters; cantilevers; capacitors; elemental semiconductors; integrated circuit design; micromechanical devices; silicon; substrate integrated waveguides; MEMS cantilevers; Si; center frequency; coupling coefficient; frequency 23.6 GHz to 25.6 GHz; integration capability; interdigital MEMS capacitor; miniaturized tunable BPF filter; silicon-based SIW-based tunable band-pass filter; substrate-integrated waveguide technology; Band-pass filters; Electromagnetic waveguides; Micromechanical devices; Microwave filters; Radio frequency; Silicon; Substrates; Band-pass filter; RF MEMS; tunable filter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/APMC.2013.6694829
Filename :
6694829
Link To Document :
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