Title :
Sub-mm-wave technologies: Systems, ICs, THz transistors
Author :
Rodwell, Mark J. W.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
MM-wave and sub-mm-wave outdoor communications links have high available bandwidth and can support multiple independent spatial transmission channels but suffer from extremely high worst-case foul-weather attenuation. Link analysis suggests that several useful systems can be realizing using power amplifiers with ~50-200 mW output power, low-noise amplifiers with ~4-7 dB noise figure, and arrays of ~64-128 elements. Such systems can be realized with Si VLSI beamformers, InP HEMT LNAs, and InP HBT or GaN HEMT power amplifiers.
Keywords :
HEMT circuits; heterojunction bipolar transistors; low noise amplifiers; microwave technology; power amplifiers; radio links; submillimetre wave integrated circuits; terahertz wave devices; HBT; HEMT LNA; HEMT power amplifier; InP; VLSI beamformer; foul weather attenuation; independent spatial transmission channel; link analysis; low noise amplifiers; outdoor communications link; submillimeter wave integrated circuit; submillimeter wave technology; terahertz transistors; Indium phosphide; Microwave amplifiers; Microwave integrated circuits; Phased arrays; Power amplifiers; Power demand; Transmitters; THz; bipolar transistors; mm-waves; sub-mm-waves; wireless ICs;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694847
