Title :
GaN MMIC broadband Doherty power amplifier
Author :
Seunghoon Jee ; Juyeon Lee ; Bonghyuk Park ; Cheol Ho Kim ; Bumman Kim
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
A quarter-wavelength transformer, phase compensation network, offset line are the bandwidth limiting factors of Doherty PAs. In this paper, we expand the bandwidth of the Doherty PA by employing a new structure. The conventional phase compensation network is merged into an input matching circuit and the offset line is resonated-out by an inductor. The quarter wavelength transformer has a low-Q characteristic compared to that of conventional one. With the proposed topology, a broadband Doherty PA is implemented using TriQuint 3MI 0.25μm GaN-HEMT MMIC process. Across 2.1-2.7 GHz, the implemented PA delivered a DE of over 40.5%, a gain of over 11.8 dB and ACPR of below -45dBc at an average power of over 33.2 dBm for LTE signal with a 6.5 dB peak-to-average power ratio. This fully integrated circuit has a chip-size of 3.5mm by 1.9mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; compensation; gallium compounds; inductors; limiters; power HEMT; transformers; wide band gap semiconductors; wideband amplifiers; ACPR; GaN; LTE signal; MMIC broadband Doherty power amplifier; PA; TriQuint 3MI HEMT MMIC process; bandwidth limiting factor; frequency 2.1 GHz to 2.7 GHz; gain 6.5 dB; inductor; input matching circuit; low-Q characteristic; offset resonated-out line; phase compensation network; quarter-wavelength transformer; size 0.25 mum; Bandwidth; Broadband amplifiers; Circuit faults; Impedance; Inductors; Power amplifiers; Broadband; Doherty; GaN HEMT; long term evolution(LTE); power amplifier;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694878