X-band low noise amplifier MMIC using AlGaN/GaN HEMT technology on SiC substrate

Author

Woojin Chang ; Gye-Ik Jeon ; Young-Rak Park ; Sangheung Lee ; Jae-Kyoung Mun

Author_Institution

IT Mater. & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

681

Lastpage

684

Abstract

A 9.7-12.9 GHz monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. The LNA shows a noise figure of 1.7-2.1 dB with a small-signal gain of 20-26 dB across the 9.7-12.9 GHz frequency range. In continuous wave (CW) conditions, the saturated output power of 34 dBm is showed at 11.2 GHz and the output third-order intercept point (OIP3) of 42 dBm is also achieved at 11.4 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; integrated circuit manufacture; low noise amplifiers; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; LNA; MMIC; SiC; X-band low noise amplifier; frequency 9.7 GHz to 12.9 GHz; gain 20 dB to 26 dB; high electron mobility transistors; monolithic microwave integrated circuit; noise figure 1.7 dB to 2.1 dB; output third-order intercept point; size 0.25 mum; Conference proceedings; GaN; HEMT; LNA; MMIC; SiC; X-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694904

Filename

6694904