Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process

Author

Si-Hua Chen ; Chih-Chun Shen ; Shou-Hsien Weng ; Yu-Cheng Liu ; Hong-Yeh Chang ; Yu-Chi Wang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

728

Lastpage

730

Abstract

Design of a DC-33 GHz cascode distributed amplifier (DA) using dual-gate device in 0.5-μm GaAs enhancement/depletion-mode (E/D-mode) high electron mobility transistor (HEMT) process is presented in this paper. A compact dual-gate HEMT is adopted in the gain cell of the DA. By using the dual-gate HEMT, the gain-bandwidth product of the DA can be further improved. The proposed DA achieves a small-signal gain of 10.6 dB, an output power 1-dB compress point (OP_1dB) of 8.9 dBm, and a 3-dB bandwidth from dc to 33 GHz. The DA is also successfully evaluated using pseudorandom bit stream (PRBS) signal with a data rate up to 12-Gbps. The proposed dual-gate DA is suitable for the high-speed data rate transmission due to its superior performance.

Keywords

III-V semiconductors; UHF amplifiers; UHF field effect transistors; distributed amplifiers; gallium arsenide; high electron mobility transistors; microwave amplifiers; microwave field effect transistors; E/D-mode HEMT process; GaAs; cascode distributed amplifier; dual-gate device; enhancement/depletion-mode high electron mobility transistor process; frequency 0 GHz to 33 GHz; gain cell; gain-bandwidth product; pseudorandom bit stream signal; size 0.5 mum; Bandwidth; Broadband communication; Distributed amplifiers; Gain; HEMTs; Logic gates; Semiconductor device measurement; Distributed amplifier; MMIC; dual-gate device; enhancement/depletion-mode (E/D-mode);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694911

Filename

6694911