Title :
A wide-band RF front-end with linear active notch filter for GSM inter-operability
Author :
Sang Gyun Kim ; Seung Hwan Jung ; Yun Seong Eo
Author_Institution :
Radio Freq. Circuits & Syst. Lab., Kwangwoon Univ., Seoul, South Korea
Abstract :
This paper presents a wide-band RF front-end for mobile TV applications covering VHF-III(174 ~ 248MHz) and UHF band(470 ~ 746MHz). The RF front-end consists of a single to differential LNA with low amplitude/phase mismatch and an active notch filter to suppress strong GSM interferer in UHF band. The notch filter, which adopts linear active inductor and Q-enhanced structure, rejects 850/900 GSM noise by 35/37 dB, respectively. The RF front-end has 12~15dB gain and 4~5dB NF. This is fabricated on 0.18μ m CMOS technology and consumes 26.28 mW.
Keywords :
CMOS analogue integrated circuits; active filters; cellular radio; differential amplifiers; inductors; interference suppression; low noise amplifiers; mobile television; notch filters; open systems; radiofrequency amplifiers; radiofrequency filters; radiofrequency integrated circuits; CMOS technology; GSM interoperability; Q-enhanced structure; UHF band; VHF-III band; frequency 174 MHz to 248 MHz; frequency 470 MHz to 746 MHz; gain 12 dB to 15 dB; interferer suppression; linear active inductor; linear active notch filter; low amplitude mismatch; low phase mismatch; mobile TV applications; noise figure 4 dB to 5 dB; power 26.28 mW; single to differential LNA; size 0.18 mum; wideband RF front-end; Active inductors; Band-pass filters; GSM; Maximum likelihood detection; Microwave filters; Radio frequency; CMOS; High linear active inductor; Notch filter; Single to differential LNA; Wide-band LNA;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694930
