DocumentCode
662075
Title
Solid state 448GHz frequency doubler using intergrated schottky membrane technology
Author
Yang, Fei ; Treuttel, J. ; Maestrini, A. ; Gatilova, L.
Author_Institution
SKLMMW, Southeast Univ., Nanjing, China
fYear
2013
fDate
5-8 Nov. 2013
Firstpage
833
Lastpage
835
Abstract
The design is to accomplish a frequency doubler by using thin membrane sub-millimeter wave integrated circuit fabrication technology. The Goubau line theory is firstly incorporated here to predefine the dimension of the channel, which is the key to the doubler´s performance. The detailed linear and nonlinear co-simulation method is presented as followed, usually several iterations are needed during the optimization flow. Finally, the expected pass-band of doubler is from 430GHz to 470GHz over 22% efficiency. And the mesa size is 10μm×8.2μm and the membrane thickness is 5μm. It shows that we can realize high efficiency frequency multipliers even up to several THz in the future by using this thin membrane fabrication technology.
Keywords
frequency multipliers; integrated circuit manufacture; integrated circuit technology; optimisation; submillimetre wave devices; Goubau line theory; expected pass-band; frequency 448 GHz; frequency multipliers; intergrated Schottky membrane technology; iterations; optimization; size 5 mum; solid state frequency doubler; sub-millimeter wave integrated circuit fabrication technology; thin membrane; Fabrication; Harmonic analysis; Metals; Microwave theory and techniques; Optimization; Power harmonic filters; Schottky diodes; Frequency Doubler; GouBau Line; Sub-Millineter Wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location
Seoul
Type
conf
DOI
10.1109/APMC.2013.6694949
Filename
6694949
Link To Document