• DocumentCode
    662075
  • Title

    Solid state 448GHz frequency doubler using intergrated schottky membrane technology

  • Author

    Yang, Fei ; Treuttel, J. ; Maestrini, A. ; Gatilova, L.

  • Author_Institution
    SKLMMW, Southeast Univ., Nanjing, China
  • fYear
    2013
  • fDate
    5-8 Nov. 2013
  • Firstpage
    833
  • Lastpage
    835
  • Abstract
    The design is to accomplish a frequency doubler by using thin membrane sub-millimeter wave integrated circuit fabrication technology. The Goubau line theory is firstly incorporated here to predefine the dimension of the channel, which is the key to the doubler´s performance. The detailed linear and nonlinear co-simulation method is presented as followed, usually several iterations are needed during the optimization flow. Finally, the expected pass-band of doubler is from 430GHz to 470GHz over 22% efficiency. And the mesa size is 10μm×8.2μm and the membrane thickness is 5μm. It shows that we can realize high efficiency frequency multipliers even up to several THz in the future by using this thin membrane fabrication technology.
  • Keywords
    frequency multipliers; integrated circuit manufacture; integrated circuit technology; optimisation; submillimetre wave devices; Goubau line theory; expected pass-band; frequency 448 GHz; frequency multipliers; intergrated Schottky membrane technology; iterations; optimization; size 5 mum; solid state frequency doubler; sub-millimeter wave integrated circuit fabrication technology; thin membrane; Fabrication; Harmonic analysis; Metals; Microwave theory and techniques; Optimization; Power harmonic filters; Schottky diodes; Frequency Doubler; GouBau Line; Sub-Millineter Wave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
  • Conference_Location
    Seoul
  • Type

    conf

  • DOI
    10.1109/APMC.2013.6694949
  • Filename
    6694949