DocumentCode :
662085
Title :
Low noise and high gain dual-band active band-pass filter with GaAs MESFET using CRLH metamaterial
Author :
Ki-Cheol Yoon ; Jaegook Lee ; Hyunwook Lee ; Jong-Chul Lee
Author_Institution :
RFIC Res. Center, Kwangwoon Univ., Seoul, South Korea
fYear :
2013
fDate :
5-8 Nov. 2013
Firstpage :
697
Lastpage :
699
Abstract :
In this paper, a low noise and high gain dual-band active bandpass filter (BPF) with GaAs MESFET using the CRLH (Composite Right/Left-Handed) metamaterial is presented. The CRLH is applied to develop a dual-band BPF using an amplifier circuit with two arbitrary frequency bands. Then, the two center frequencies of the filter are chosen as f1=1.23 GHz and f2=1.63 GHz, where the phase slop characteristics of the response are chosen as f1=-90° and f2= -270°. The experimental results are gain value of 7.82 dB and 7.03 dB and the return losses of -15.1 dB and -10.1 dB with bandwidth of 55 MHz (4.4 %) and 105 MHz (6.4 %) at the center frequencies of 1.22 GHz and 1.61 GHz, respectively.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF filters; active filters; band-pass filters; metamaterials; CRLH metamaterial; GaAs; MESFET; amplifier circuit; bandwidth 55 MHz; composite right/left-handed metamaterial; dual-band BPF; frequency 1.22 GHz; frequency 1.23 GHz; frequency 1.61 GHz; frequency 1.63 GHz; gain 7.03 dB; gain 7.82 dB; high gain dual-band active band-pass filter; loss -10.1 dB; loss -15.1 dB; low noise filter; phase slop characteristics; Band-pass filters; Dual band; Gain; Gallium arsenide; MESFETs; Metamaterials; Noise; CRLH; active; bandpass filter; dual band; low noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/APMC.2013.6694959
Filename :
6694959
Link To Document :
بازگشت