Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

Author

Tessmann, A. ; Schlechtweg, Michael ; Bruch, Daniel ; Lewark, U.J. ; Leuther, A. ; Massler, Hermann ; Wagner, Steffen ; Seelmann-Eggebert, Matthias ; Hurm, V. ; Aidam, R. ; Kallfass, I. ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

203

Lastpage

205

Abstract

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4" GaAs substrates. The potential of this technology is demonstrated in this paper by two TMICs operating at 600 GHz: a high-gain amplifier and an active frequency multiplier-by-six.

Keywords

HEMT integrated circuits; III-V semiconductors; MIMIC; MMIC amplifiers; electric sensing devices; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; microwave detectors; submillimetre wave amplifiers; submillimetre wave detectors; submillimetre wave integrated circuits; Fraunhofer IAF; GaAs; In_0.80Ga_0.20As-In_0.52Al_0.48As; MMIC; TMIC; active frequency multiplier-by-six; communication system; frequency 600 GHz; high-gain amplifier; mHEMT technology; metamorphic high electron mobility transistor technology; millimeter-wave integrated circuit; module; sensor; size 4 in; terahertz monolithic integrated circuit; Frequency measurement; Logic gates; MODFETs; Power generation; Semiconductor device measurement; mHEMTs; amplifier; frequency multiplier; metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); terahertz monolithic integrated circuit (TMIC);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695094

Filename

6695094