Title :
77–110GHz 90nm-CMOS receiver design
Author :
Jo-Han Yu ; Chien-Hsiung Liao ; Cheng-Huang Hsieh ; Hu, Rose ; Dow-Chih Niu
Author_Institution :
Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
This manuscript details our latest 90nm CMOS W-band receiver design where the RF LNA, resistive mixer, IF differential amplifier and LO tripler have been integrated, thus allows the whole 77-110GHz spectrum to be down-converted into quasi-DC -33GHz using a much lower microwave frequency. In addition to being used in our broadband receiver array project, this W-band circuit is also eligible for the conventional 77/94GHz vehicular and surveillance applications. This 90nm-CMOS receiver with LO tripler has around -0.4dB conversion gain, 18dB noise figure, 48dB LO-IF isolation, and its chip size is 950-times-750μm2, with 114mW power dissipation at 1.3V DC bias.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; millimetre wave receivers; CMOS W-band receiver design; CMOS receiver; IF differential amplifier; LO tripler; RF LNA; W-band circuit; broadband receiver array project; frequency 77 GHz to 110 GHz; noise figure 18 dB; power 114 mW; resistive mixer; size 90 nm; surveillance applications; vehicular applications; voltage 1.3 V; CMOS integrated circuits; Frequency measurement; Gain; Mixers; Radio frequency; Receivers; Transistors; CMOS; MMIC; W-band; millimeter-wave; mixer; receiver; tripler;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6695104
