77–110GHz 90nm-CMOS receiver design

Author

Jo-Han Yu ; Chien-Hsiung Liao ; Cheng-Huang Hsieh ; Hu, Rose ; Dow-Chih Niu

Author_Institution

Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

233

Lastpage

235

Abstract

This manuscript details our latest 90nm CMOS W-band receiver design where the RF LNA, resistive mixer, IF differential amplifier and LO tripler have been integrated, thus allows the whole 77-110GHz spectrum to be down-converted into quasi-DC -33GHz using a much lower microwave frequency. In addition to being used in our broadband receiver array project, this W-band circuit is also eligible for the conventional 77/94GHz vehicular and surveillance applications. This 90nm-CMOS receiver with LO tripler has around -0.4dB conversion gain, 18dB noise figure, 48dB LO-IF isolation, and its chip size is 950-times-750μm², with 114mW power dissipation at 1.3V DC bias.

Keywords

CMOS analogue integrated circuits; differential amplifiers; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; millimetre wave receivers; CMOS W-band receiver design; CMOS receiver; IF differential amplifier; LO tripler; RF LNA; W-band circuit; broadband receiver array project; frequency 77 GHz to 110 GHz; noise figure 18 dB; power 114 mW; resistive mixer; size 90 nm; surveillance applications; vehicular applications; voltage 1.3 V; CMOS integrated circuits; Frequency measurement; Gain; Mixers; Radio frequency; Receivers; Transistors; CMOS; MMIC; W-band; millimeter-wave; mixer; receiver; tripler;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695104

Filename

6695104