Title :
A broadband low-noise wide dynamic range SiGe front-end receiver IC for multi-band access points
Author :
Kaho, T. ; Yamaguchi, Yoshio ; Shiba, H. ; Kawashima, Mitsumasa ; Toshinaga, Hideki ; Uehara, Kazuhiro
Author_Institution :
NTT Network Innovation Labs., NTT Corp., Yokosuka, Japan
Abstract :
A broadband, low-noise, wide dynamic range front-end receiver IC is reported. It uses 0.25 μm SiGe BiCMOS process technology and consists of broadband variable gain low noise amplifiers (VGLNAs), down-conversion mixers, step attenuators, and buffer amplifiers. It can receive triple-band signals concurrently, and the chip size is only 3mm × 3mm. Its measured noise figure was under 3.2 dB and the measured conversion gain was around 30 dB in the broad frequency range from 300 MHz to 3 GHz. It has a wide gain control range of around 100 dB; 50 dB is controlled by the VGLNA and the step attenuator, and 50 dB by the mixer with novel relative power control method using dual LO signal. The gain control enhances the input 1dB compression point from -40 dBm to -21 dBm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; bipolar MMIC; gain control; low noise amplifiers; microwave amplifiers; mixers (circuits); power control; SiGe; SiGe BiCMOS process technology; SiGe front-end receiver; VGLNA; broadband variable gain; buffer amplifiers; down-conversion mixers; frequency 300 MHz to 3 GHz; gain control; integrated circuit; low noise amplifiers; multiband access points; relative power control; size 0.25 mum; step attenuators; Broadband amplifiers; Frequency measurement; Gain; Mixers; Radio frequency; Receivers; Multi-band receiver; broadband low noise amplifier; concurrent multiband mixer;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6695115
