Homogeneity Characterization of Lattice Spacing of Silicon Single Crystals

Author

Waseda, Atsushi ; Fujimoto, Hiroyuki ; Xiao Wei Zhang ; Kuramoto, Naoki ; Fujii, Kenichi

Author_Institution

Nat. Metrol. Inst. of Japan, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

Volume

64

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1692

Lastpage

1695

Abstract

The homogeneity of the lattice spacing of silicon single crystals was investigated by a self-referenced lattice comparator. Strain measurements were performed on single crystals from an ²⁸Si ingot (Avo28), which was used to determine the Avogadro constant. A swirl pattern was observed for sample 9.R1 cut from the tail side of the Avo28 ingot. The lattice spacing distribution of seed-side sample 4.R1 was smooth and homogeneous. The lattice spacing distribution was larger for the sample with higher impurities of carbon and oxygen.

Keywords

elemental semiconductors; lattice constants; silicon; spatial variables measurement; strain measurement; Avo28 ingot; Avogadro constant; Si; homogeneity characterization; lattice spacing distribution; sample 9.R1 cut; seed-side sample 4.R1; self-referenced lattice comparator; silicon single crystal; strain measurement; swirl pattern; Carbon; Crystals; Diffraction; Impurities; Lattices; Metrology; Silicon; Avogadro constant; impurity; lattice comparator; lattice spacing; silicon single crystal; silicon single crystal.;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2014.2383091

Filename

7004030