DocumentCode
66230
Title
Ultrathin Ni(Pt)Si Film Formation Induced by Laser Annealing
Author
Long Li ; Yu-Long Jiang ; Bing-Zong Li
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
Volume
34
Issue
7
fYear
2013
fDate
Jul-13
Firstpage
912
Lastpage
914
Abstract
A highly sensitive dependence of laser annealing process on the as-deposited Ni(Pt) film thickness is observed and investigated for the first time. It is revealed that a much larger thermal budget is required for the thinner as-deposited Ni(Pt) film to form a high quality Ni(Pt)Si film, which is very different from the conventional rapid thermal process. Micro-Raman spectroscopy and X-ray photoelectron spectroscopy both demonstrate that the same thermal budget can only induce a lower silicidation temperature for the thinner Ni(Pt) film. The lower silicidation temperature is attributed to the lower optical absorptivity of the thinner Ni(Pt) film.
Keywords
Raman spectra; X-ray photoelectron spectra; laser beam annealing; nickel compounds; platinum compounds; thin films; NiPtSi; X-ray photoelectron spectroscopy; conventional rapid thermal process; laser annealing; microRaman spectra; optical absorptivity; silicidation temperature; thermal budget; ultrathin film formation; Laser annealing (LA); Ni(Pt)Si; silicide;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2257662
Filename
6517213
Link To Document