Title :
An optimized process of high-performance integrated passive devices (IPDs) on SI-GaAs substrate for RF applications
Author :
Yang Li ; Cong Wang ; Nam-Young Kim
Author_Institution :
RFIC Center, Kwangwoon Univ., Seoul, South Korea
Abstract :
An integrated passive device (IPD) technology by semi-insulating (SI) GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction for RF and microwave applications. In this paper, we develop an advanced optimized process for realizing IPDs to reduce fabrication time and total cost and to increase RF performances. The critical characteristics of lumped elements thin film resistor (TFR), spiral inductor and metal-insulator-metal (MIM) capacitor are optimized in this advanced process. A low-pass filter (LPF) for global system for mobile communications (GSM) is demonstrated by using this IPD process; it shows very good RF performances in spite of its small chip size and low cost, when compared with the recently reported literature.
Keywords :
MIM devices; capacitors; cellular radio; circuit optimisation; inductors; integrated circuit manufacture; low-pass filters; passive filters; radiofrequency filters; radiofrequency integrated circuits; thin film resistors; GaAs; RF applications; SI-GaAs substrate; fabrication time reduction; global system for mobile communications; high-performance integrated passive devices; low-pass filter; lumped elements; metal-insulator-metal capacitor; semiinsulating GaAs-based fabrication; spiral inductor; thin film resistor; total cost reduction; Fabrication; Gold; Inductors; Microwave filters; Radio frequency; Substrates; Integrated passive device (IPD); Process optimization; SU-8 photo-resist (PR); Si-GaAs substrate; low-pass filter (LPF);
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6695209
