Title :
Table of contents
Abstract :
The following topics are dealt with: GaN devices; GaN based circuit prototyping; SiC devices; SiC based power module and integrated circuits; high performance gate drive; packaging; device testing; wide bandgap based high power circuits; gate and interface; switch applications; device evaluation and modeling; operation and reliability.
Keywords :
III-V semiconductors; gallium compounds; modules; monolithic integrated circuits; power integrated circuits; power semiconductor devices; semiconductor device models; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; GaN based circuit prototyping; GaN devices; SiC based power module; device evaluation; device modeling; device operation; device testing; high performance gate drive; integrated circuits; interface; packaging; reliability; switch applications; wide bandgap based high power circuits;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695546
