Title :
Ultrahigh voltage SiC bipolar devices
Author :
Fukuda, Kenji ; Okamoto, Dai ; Harada, Shingo ; Tanaka, Yuichi ; Yonezawa, Yoshiyuki ; Deguchi, Tadayoshi ; Katakami, Shuji ; Ishimori, Hitoshi ; Takasu, Shinji ; Arai, Manabu ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Takei, Manabu ; Matsumoto, Kaname ; Ohs
Author_Institution :
Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (Rdiff,on) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.
Keywords :
insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; silicon compounds; wide band gap semiconductors; DBC substrate; PiN diode; Si3N4; SiC; low differential specific on-resistance; nanotech resin; p-channel IGBT; package technology; ultrahigh voltage SiC bipolar devices; voltage 13 kV; Insulated gate bipolar transistors; PIN photodiodes; Resins; Silicon carbide; Substrates; Temperature; Voltage measurement;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695556
