Title :
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
Author :
Meng-Chia Lee ; Xing Huang ; Huang, A. ; Van Brunt, E.
Author_Institution :
Dept. of Electr. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - a transition phase in between the initial voltage ramp and punch-through.
Keywords :
buffer layers; insulated gate bipolar transistors; power bipolar transistors; silicon compounds; wide band gap semiconductors; 4H-SiC IGBT; SiC; continuity equation; initial voltage ramp; punch-through; total charge; transition phase; turn-off speed; varied buffer layer designs; voltage ramp; Buffer layers; Charge carrier density; Current density; Equations; Estimation; Insulated gate bipolar transistors; Mathematical model;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695559
