Design and testing of a 1 kW silicon-carbide (SiC) power module

Author

Neft, Charles ; Hanna, Emil ; Mehrotra, Vivek ; Gould, Kyle ; Bhunia, Avijit

Author_Institution

Teledyne Sci. & Imaging, Thousand Oaks, CA, USA

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

64

Lastpage

67

Abstract

A high-temperature, SiC JFET power module was designed for use in a bi-directional, single-stage DC-DC converter. The converter is the interface between a 28 V battery and a 300 V bus, and is required to operate in a harsh environment with an ambient temperature of 120 °C and available 100 °C water-ethylene glycol (WEG) coolant. The power module consists of two JFETs in a single pole configuration with SiC Schottky diodes used as freewheeling diodes. The power module has been subjected to standard characterization tests and also extended (tens of hours) operational tests to confirm its suitability for the application. To the best of our knowledge this is the first demonstration of long term reliability of high temperature (175 °C device junction) SiC power electronics power conversion, with tens of hours of operation well past its infant mortality period.

Keywords

DC-DC power convertors; Schottky diodes; junction gate field effect transistors; organic compounds; power field effect transistors; silicon compounds; water; wide band gap semiconductors; Schottky diodes; SiC; SiC JFET power module; bi-directional single-stage DC-DC converter; freewheeling diodes; harsh environment; power 1 kW; reliability; silicon-carbide power module; single pole configuration; temperature 100 degC; temperature 120 degC; temperature 175 degC; voltage 28 V; voltage 300 V; water-ethylene glycol coolant; Batteries; Coolants; JFETs; Load flow; Logic gates; Multichip modules; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695563

Filename

6695563