DocumentCode :
662677
Title :
Research and development on Ga2O3 transistors and diodes
Author :
Higashiwaki, Masataka ; Sasaki, Kazuhiko ; Wong, Man Hoi ; Kamimura, Taeko ; Krishnamurthy, Dheepak ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
fYear :
2013
fDate :
27-29 Oct. 2013
Firstpage :
100
Lastpage :
103
Abstract :
New widegap compound semiconductor gallium oxide (Ga2O3) power devices have been attracted as strong candidates for future power electronics. Here, we will introduce material properties, productivity of Ga2O3, and current status of research and development on its transistors and diodes.
Keywords :
gallium compounds; power semiconductor diodes; power transistors; wide band gap semiconductors; Ga2O3; Ga2O3 transistors; current status; diodes; material properties; power electronics; productivity; widegap compound semiconductor gallium oxide power devices; Crystals; Gallium nitride; MOSFET; Silicon; Silicon carbide; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
Type :
conf
DOI :
10.1109/WiPDA.2013.6695572
Filename :
6695572
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=662677
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