Title :
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT
Author :
Iucolano, F. ; Miccoli, Carmine ; Nicotra, M. ; Stocco, Andrea ; Rampazzo, Franco ; Zanandrea, Alberto ; Cinnera, Martino V. ; Patti, Anand ; Rinaudo, S. ; Soci, F. ; Chini, Alessandro ; Zanoni, Enrico ; Meneghesso, Gaudenzio
Author_Institution :
STMicroelectron., IMS R&D, Catania, Italy
Abstract :
In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; passivation; power semiconductor devices; semiconductor device models; silicon compounds; wide band gap semiconductors; AlGaN-GaN; Si3N4; SiN passivation layer; T-CAD simulations; drain leakage current; electrical characteristics; normally-off AlGaN-GaN HEMT; silicon concentration; Aluminum gallium nitride; Gallium nitride; Leakage currents; Logic gates; Passivation; Silicon; Silicon compounds;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695587
