Title :
A cross batch characterization of GaN HEMT devices for power electronics applications
Author :
Aggas, Jeffrey M. ; Jenkins, Luke L. ; Wilson, Christopher G. ; Moses, Justin D. ; Abell, William E. ; Rhea, Benjamin K. ; Dean, Robert N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
Abstract :
Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes have been. Inconsistent RDS(ON) characteristics across manufactured batches can cause device failure as well as an imbalance in current distribution if the devices are used in a parallel fashion. The device of interest in this work is the Efficient Power Conversion (EPC) 2015 GaN HEMT. Five batches manufactured approximately six months apart are characterized. Manufacturing reliability analysis is presented and the results are compared with the device characteristics provided by EPC.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power transistors; semiconductor device reliability; switched mode power supplies; EPC2015 GaN HEMT; GaN; GaN HEMT devices; cross batch characterization; efficient power conversion; manufacturing reliability analysis; power electronics applications; switch-mode power supply applications; Gallium nitride; HEMTs; Manufacturing; Market research; Power electronics; Sociology; Switches;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695589
