• DocumentCode
    662696
  • Title

    Silicon carbide high-temperature packaging module fabrication

  • Author

    Brokaw, Wendell ; Elmes, John ; Grummel, Brian ; Shen, Z. John ; Wu, Thomas X.

  • Author_Institution
    Coll. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2013
  • fDate
    27-29 Oct. 2013
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    A proposed method for accommodating high-temperature operation has been studied and developed through combined efforts of Advanced Power Electronics Corporation (ApECOR) and University of Central Florida. A novel process is being explored that will ultimately lead to design, fabrication, and verification of high temperature packaging for silicon carbide (SiC) power modules. The process is established to advance the operational capabilities of power modules during high-temperature conditions. Prototype modules were produced and underwent significant testing to establish capability of operation at a minimum temperature of 350 °C with probable expectation of operation in excess of 400 °C. A strenuous thermal cycle testing apparatus was established to rapidly cycle prototype modules between 80 °C and 350 °C in excess of 150 iterations per module. Analysis of the testing data did not exhibit degradation in the module performance characteristics, indicating successful module design performance. Based on the scope and goals of this research effort, further development of the design process is believed to be feasible for progression towards further development and commercialization.
  • Keywords
    power semiconductor devices; semiconductor device packaging; semiconductor device testing; silicon compounds; wide band gap semiconductors; SiC; module design performance; power modules; prototype modules; silicon carbide high-temperature packaging module fabrication; temperature 80 degC to 400 degC; thermal cycle testing apparatus; Bonding; MOSFET; Packaging; Silicon carbide; Stress; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
  • Conference_Location
    Columbus, OH
  • Type

    conf

  • DOI
    10.1109/WiPDA.2013.6695591
  • Filename
    6695591