DocumentCode
662899
Title
Controllable pulse parameter transcranial magnetic stimulator with enhanced pulse shaping
Author
Peterchev, Angel V. ; Murphy, David L.
Author_Institution
Depts. of Psychiatry & Behavioral Sci., Duke Univ., Durham, NC, USA
fYear
2013
fDate
6-8 Nov. 2013
Firstpage
121
Lastpage
124
Abstract
Commercially available transcranial magnetic stimulation (TMS) devices provide very limited control over the pulse parameters. We present a third generation controllable pulse parameter device (cTMS3) that uses a novel full-bridge circuit topology with two energy storage capacitors and incorporates a number of implementation and functionality advantages over conventional TMS devices and previous cTMS devices. cTMS3 is implemented with transistors with lower voltage rating than previous cTMS devices. It provides more flexible pulse shaping since the circuit topology allows four coil voltage levels during a pulse, including zero voltage. The zero coil voltage level enables snubbing of the ringing at the end of the pulse without the need for a separate active snubber circuit. cTMS3 can generate powerful rapid pulse bursts (<; 10 ms inter pulse interval) by increasing the width of each subsequent pulse and utilizing the large capacitor energy storage. These features enhance the advantages of cTMS and could extend the utility of TMS as a research, diagnostic, and therapeutic tool.
Keywords
biomedical equipment; capacitors; coils; energy storage; network topology; patient diagnosis; patient treatment; pulse shaping; transcranial magnetic stimulation; active snubber circuit; cTMS3 device; capacitor energy storage; commercially available TMS device; controllable pulse parameter transcranial magnetic stimulator; diagnostic tool; energy storage capacitor; flexible pulse shaping; full-bridge circuit topology; limited pulse parameter control; low transistor voltage rating; powerful rapid pulse burst generation; pulse end ringing snubbing; pulse shaping enhancement; research tool; therapeutic tool; third generation controllable pulse parameter device; zero coil voltage level; Capacitors; Coils; Insulated gate bipolar transistors; Resistance; Snubbers; Switches; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Neural Engineering (NER), 2013 6th International IEEE/EMBS Conference on
Conference_Location
San Diego, CA
ISSN
1948-3546
Type
conf
DOI
10.1109/NER.2013.6695886
Filename
6695886
Link To Document