Temporal Stability of Y–Ba–Cu–O Nano Josephson Junctions from Ion Irradiation

Author

Cybart, Shane A. ; Roediger, P. ; Ke Chen ; Parker, J.M. ; Cho, Ethan Y. ; Wong, T.J. ; Dynes, Robert C.

Author_Institution

Mater. Sci. Div., Lawrence Berkeley Nat. Lab., Berkeley, CA, USA

Volume

23

Issue

3

fYear

2013

fDate

Jun-13

Firstpage

1100103

Lastpage

1100103

Abstract

We investigate the temporal stability of YBa₂Cu₃ O_7-δ Josephson junctions created by ion irradiation through a nanoscale implant mask fabricated using electron beam lithography and reactive ion etching. A comparison of current-voltage characteristics measured for junctions after fabrication and eight years of storage at room temperature show a slight decrease in critical current and increase in normal state resistance consistent with broadening of the weak link from diffusion of defects. Shapiro step measurements performed eight years after fabrication reveal that device uniformity is maintained and is strong evidence that these devices have excellent temporal stability for applications.

Keywords

Josephson effect; barium compounds; electrical resistivity; electron beam lithography; high-temperature superconductors; ion beam effects; masks; sputter etching; yttrium compounds; Shapiro step measurements; Y-Ba-Cu-O nanoJosephson junctions; YBa₂Cu₃O_7-δ; critical current; current-voltage characteristics; defect diffusion; device uniformity; electron beam lithography; ion irradiation; nanoscale implant mask; normal state resistance; reactive ion etching; temporal stability; weak link broadening; Current measurement; Electrical resistance measurement; Fabrication; Josephson junctions; Junctions; Temperature measurement; Yttrium barium copper oxide; Ion implantation; Josephson junctions; nanolithography; yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2012.2227646

Filename

6353171