Title :
Low Loss, Cu damascene interconnects and passives compatible with GaN MMIC
Author :
Margomenos, A. ; Micovic, M. ; Butler, Charles ; Holden, B.T. ; Chang, D.T. ; McGuire, C. ; Chow, D.H.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
We report a Cu damascene process on multi-layer benzocyclobutene (BCB) dielectrics compatible with GaN MMICs that enables the creation of low-loss, high power handling and high current carrying interconnects. The reported process uses two thick Cu traces (7 μm and 3 μm) and two supplemental Au layers. 7 μm thick Cu traces with width and pitch of 4 μm were realized. Reported circuits showed 0.11 dB/mm loss at 50 GHz, inductor Q-factors of 30 and 57, 3:1 planar balun with less than 2 dB insertion loss, 100% yielding RF and DC via chains.
Keywords :
III-V semiconductors; MMIC; Q-factor; dielectric materials; gallium compounds; inductors; integrated circuit interconnections; wide band gap semiconductors; BCB dielectrics; Cu; Cu damascene interconnects; DC via chain; GaN; GaN MMIC; Q-factor; RF via chain; benzocyclobutene dielectrics; frequency 50 GHz; inductor; multilayer dielectrics; supplemental Au layers; thick Cu traces; Gallium nitride; Gold; Inductors; Integrated circuit interconnections; MMICs; Radio frequency; Copper; damascene integration; gallium nitride; power amplifiers;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697331
