A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier

Author

van der Heijden, Mark P. ; Acar, Mustafa ; Maroldt, S.

Author_Institution

NXP Semicond., Eindhoven, Netherlands

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A 50 W CMOS-GaN class-E power amplifier in a package is presented. The class-E operated GaN HEMT power bar switches are driven by a high speed, high voltage CMOS power bar driver chip, implemented in a standard 65 nm process technology. The proposed switch-mode power amplifier demonstrates 76% line-up efficiency and 85% GaN drain efficiency at 2.14 GHz, including the losses of the matching network in the package. To the authors knowledge this is the world´s first package-integrated CMOS-GaN power amplifier that could enable digital transmitter architectures based on true switch-mode power amplifier blocks.

Keywords

CMOS integrated circuits; III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; CMOS power bar driver chip; GaN; GaN HEMT power bar switches; GaN drain efficiency; RF CMOS-GaN; class-E power amplifier; digital transmitter architecture; frequency 2.14 GHz; line-up efficiency; package-integrated power amplifier; power 50 W; switch-mode power amplifier block; CMOS integrated circuits; Gallium nitride; HEMTs; Power amplifiers; Power generation; Radio frequency; Standards; Base station; CMOS; GaN; class-E; digital transmitter; drain efficiency; switch mode power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697347

Filename

6697347