A low-power wideband dual-feedback LNA exploiting the gate-inductive bandwidth/gain-enhancement technique

Author

Hung-Ting Chou ; Shin-Wei Chen ; Hwann-Kaeo Chiou

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A novel wideband dual-feedback low noise amplifier (LNA) implemented in standard 0.18 μm CMOS process is proposed in this paper. The proposed dual feedback topology can improve the total noise contribution for LNA design. By exploiting the gate-inductive bandwidth gain-enhancement (GIBE) technique, the LNA can extend the more than 30 % bandwidth and enhance gain an overall bandwidth of DC to 5 GHz. Besides, the fabricated LNA with the current-mirror circuit consumes a power of 10.4 mW. The proposed LNA achieves an average gain of 13.9 dB and a minimum noise figure (NF) of 2.76 dB from DC to 5 GHz. The LNA achieves a good figure-of-merit (FoM) of 3.8. The chip area is 0.45 mm² with all pads and dummy blocks.

Keywords

CMOS integrated circuits; circuit feedback; current mirrors; integrated circuit design; low noise amplifiers; low-power electronics; microwave amplifiers; CMOS process; LNA design; bandwidth 0 GHz to 5 GHz; current-mirror circuit; dual feedback topology; gate-inductive bandwidth/gain-enhancement technique; low-power wideband dual-feedback LNA; noise contribution; noise figure; power 10.4 mW; size 0.18 mum; wideband dual-feedback low noise amplifier; CMOS integrated circuits; Gain; Logic gates; Noise measurement; Transistors; Wideband; CMOS LNA; feedback; gate-inductive bandwidth gain-enhancement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697349

Filename

6697349