GaAs MMIC pHEMT gate metal thermometry

Author

Schwitter, Bryan K. ; Parker, Anthony E. ; Albahrani, Sayed ; Fattorini, Anthony P. ; Heimlich, Michael C.

Author_Institution

Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT´s gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.

Keywords

III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; ionisation; thermal resistance measurement; GaAs; GaAs MMIC pHEMT gate; channel temperature estimation; gate leakage; hole current; ionization; metal resistance; metal thermometry; thermal resistance measurement; thermal response; thermal simulations; Electrical resistance measurement; Gallium arsenide; Heating; Logic gates; Temperature measurement; Thermal resistance; Electrothermal effects; HEMTs; MMICs; gate leakage; temperature measurement; thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697358

Filename

6697358