Title :
GaAs MMIC pHEMT gate metal thermometry
Author :
Schwitter, Bryan K. ; Parker, Anthony E. ; Albahrani, Sayed ; Fattorini, Anthony P. ; Heimlich, Michael C.
Author_Institution :
Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT´s gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; ionisation; thermal resistance measurement; GaAs; GaAs MMIC pHEMT gate; channel temperature estimation; gate leakage; hole current; ionization; metal resistance; metal thermometry; thermal resistance measurement; thermal response; thermal simulations; Electrical resistance measurement; Gallium arsenide; Heating; Logic gates; Temperature measurement; Thermal resistance; Electrothermal effects; HEMTs; MMICs; gate leakage; temperature measurement; thermal resistance;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697358
