Title :
UHF class-E power amplifier based upon multi-harmonic approximation
Author :
Beltran, Ramon A.
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA, USA
Abstract :
At high frequencies class-E power amplifiers operation is limited by the device drain parasitics so that true-transient operation is not possible, hence harmonic approximation is used based upon the second and/or the third harmonic control using either transmission-line or lumped-element resonators. The class-E amplifier described in this paper employs a multi-harmonic network to control the device reactances at intrinsic drain up to ten harmonics. Based upon classic design equations, the impedances are close to their optimum values for lower-order harmonics producing 90% efficiency for an ideal device resembling true-transient class-E operation at high frequency. Nevertheless, a working prototype presents an efficiency of 85% with 10-W output power at 400MHz fundamental-frequency using a GaN FET.
Keywords :
harmonics; power amplifiers; FET; UHF class E power amplifier; classic design equations; device drain parasitics; device reactances; fundamental frequency; harmonics; impedances; intrinsic drain; lumped element resonators; multiharmonic approximation; multiharmonic network; third harmonic control; transmission line; true transient class E operation; true transient operation; Band-pass filters; Broadband communication; Harmonic analysis; Impedance; Power amplifiers; Power generation; Power harmonic filters; Amplifier; Class-E; efficiency;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697389