200 GHz interconnects for InP-on-BiCMOS integration

Author

Ostermay, Ina ; Schmueckle, F.-J. ; Doerner, Ralf ; Thies, Andreas ; Heinrich, Wolfgang ; Krueger, O. ; Krozer, V. ; Jensen, T. ; Kraemer, T. ; Lisker, M. ; Trusch, A. ; Matthus, E. ; Borokhovych, Y. ; Tillack, Bernd

Author_Institution

Ferdinand-Braun-Inst., Berlin, Germany

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using this process vertical interconnects are realized that exhibit excellent broadband transmission properties up to 220 GHz. Insertion loss remains below 0.5dB up to W-band and 1dB to 220GHz. The interconnects can be described with good accuracy by 3D EM simulation over the full frequency range.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; III-V semiconductors; elemental semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit interconnections; monolithic integrated circuits; wafer-scale integration; 3D EM simulation; 3D integration approach; BCB wafer bonding; BiCMOS integration; HBT; InP; SiGe; broadband transmission properties; insertion loss; process vertical interconnects; transferred substrate concept; BiCMOS integrated circuits; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Silicon; Transmission line measurements; BiCMOS integrated circuits; InP integrated circuits; interconnects; monolithic integrated circuits; three-dimensional integrated circuits; wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697393

Filename

6697393