0.5W X-band SiGe PA with integrated double-tuned transformers

Author

Harir, Eyal ; Socher, Eran

Author_Institution

Sch. of Electr. Eng., Tel-Aviv Univ., Tel Aviv, Israel

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only high-speed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 % power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm². To our knowledge, those values are the highest in SiGe-HBT power amplifiers.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; transformers; AB cascode PA; HBT Technology; SiGe; X-band PA; active array antenna; double tuned transformer; high speed HBT; input matching network; output matching network; power 0.5 W; power added efficiency; power amplifier; size 0.18 mum; size 0.56 mm; size 0.85 mm; Circuit faults; Gain; Impedance; Impedance matching; Power amplifiers; Power generation; Silicon germanium; Cascode; heterojunction bipolar transistor (HBT); power amplifier (PA); silicon germanium (SiGe);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697396

Filename

6697396