DocumentCode
664411
Title
Discontinuity at origin in Volterra and band-pass limited models
Author
Sombrin, J. ; Soubercaze-Pun, Geoffroy ; Albert, Isabelle
Author_Institution
TeSA, Toulouse, France
fYear
2013
fDate
2-7 June 2013
Firstpage
1
Lastpage
4
Abstract
Discontinuities at origin have been used to better approximate measured curves in recent papers but generally not explicitly and their physical validity has not always been demonstrated. In this communication, we show that these discontinuities can be explained by physically acceptable discontinuities in the real physical device. We propose simple criteria to accept or reject these discontinuities, in either passive or active devices, depending on the order of the discontinuity. In addition, we show that models having such discontinuities behave differently from classical models. In particular, these discontinuities explain non-integer dB/dB slopes of harmonic power and intermodulation power as a function of input power. Recent and older measurements of intermodulation products in passive devices, telephony base-station and RF transistors show such a behavior so that supposed lack of measurement cannot be used as a reason to reject discontinuities as non-physical.
Keywords
Volterra series; intermodulation; RF transistors; Volterra models; active devices; band-pass limited models; harmonic power; intermodulation power; intermodulation products; passive devices; physical device; physically acceptable discontinuities; telephony base-station; Analytical models; Chebyshev approximation; Harmonic analysis; Mathematical model; Polynomials; Transforms; Cann model; Rapp model; Volterra model; band-pass limited model; behavioral model; discontinuity; harmonics; intermodulation products;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location
Seattle, WA
ISSN
0149-645X
Print_ISBN
978-1-4673-6177-4
Type
conf
DOI
10.1109/MWSYM.2013.6697419
Filename
6697419
Link To Document