DocumentCode :
664414
Title :
80W GaN SSPAs for spaceflight application
Author :
Green, C.R. ; Seymour, C.D.
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
3
Abstract :
Astrium and SEDI have designed, manufactured and qualified a range of high power, high efficiency GaN transistor devices in S and L bands. Formal qualification testing of the SEDI GaN HEMT process was completed in July 2011 and additional testing was completed in October 2011 to gain full JAXA qualification. At equipment level, Astrium has completed the Engineering Qualification Model (EQM) development of an S Band GaN SSPA, including Electronic Power Conditioner (EPC), for near term flight deployment on a major navigation satellite programme. The paper describes the range of GaN devices developed together with a summary of the qualification activities and a presentation of performance achievements.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; satellite navigation; space vehicle electronics; wide band gap semiconductors; Astrium; EPC; EQM; GaN; HEMT process; SEDI; SSPA; electronic power conditioner; engineering qualification model; navigation satellite programme; near term flight deployment; power 80 W; solid state power amplifiers; spaceflight application; Gallium nitride; Power amplifiers; Power generation; Qualifications; Radio frequency; Satellite navigation systems; Testing; Gallium Nitride; Microwave Amplifiers; Satellite Navigation Systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697422
Filename :
6697422
Link To Document :
بازگشت