• DocumentCode
    664414
  • Title

    80W GaN SSPAs for spaceflight application

  • Author

    Green, C.R. ; Seymour, C.D.

  • fYear
    2013
  • fDate
    2-7 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Astrium and SEDI have designed, manufactured and qualified a range of high power, high efficiency GaN transistor devices in S and L bands. Formal qualification testing of the SEDI GaN HEMT process was completed in July 2011 and additional testing was completed in October 2011 to gain full JAXA qualification. At equipment level, Astrium has completed the Engineering Qualification Model (EQM) development of an S Band GaN SSPA, including Electronic Power Conditioner (EPC), for near term flight deployment on a major navigation satellite programme. The paper describes the range of GaN devices developed together with a summary of the qualification activities and a presentation of performance achievements.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; satellite navigation; space vehicle electronics; wide band gap semiconductors; Astrium; EPC; EQM; GaN; HEMT process; SEDI; SSPA; electronic power conditioner; engineering qualification model; navigation satellite programme; near term flight deployment; power 80 W; solid state power amplifiers; spaceflight application; Gallium nitride; Power amplifiers; Power generation; Qualifications; Radio frequency; Satellite navigation systems; Testing; Gallium Nitride; Microwave Amplifiers; Satellite Navigation Systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
  • Conference_Location
    Seattle, WA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-6177-4
  • Type

    conf

  • DOI
    10.1109/MWSYM.2013.6697422
  • Filename
    6697422