DocumentCode
664414
Title
80W GaN SSPAs for spaceflight application
Author
Green, C.R. ; Seymour, C.D.
fYear
2013
fDate
2-7 June 2013
Firstpage
1
Lastpage
3
Abstract
Astrium and SEDI have designed, manufactured and qualified a range of high power, high efficiency GaN transistor devices in S and L bands. Formal qualification testing of the SEDI GaN HEMT process was completed in July 2011 and additional testing was completed in October 2011 to gain full JAXA qualification. At equipment level, Astrium has completed the Engineering Qualification Model (EQM) development of an S Band GaN SSPA, including Electronic Power Conditioner (EPC), for near term flight deployment on a major navigation satellite programme. The paper describes the range of GaN devices developed together with a summary of the qualification activities and a presentation of performance achievements.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; satellite navigation; space vehicle electronics; wide band gap semiconductors; Astrium; EPC; EQM; GaN; HEMT process; SEDI; SSPA; electronic power conditioner; engineering qualification model; navigation satellite programme; near term flight deployment; power 80 W; solid state power amplifiers; spaceflight application; Gallium nitride; Power amplifiers; Power generation; Qualifications; Radio frequency; Satellite navigation systems; Testing; Gallium Nitride; Microwave Amplifiers; Satellite Navigation Systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location
Seattle, WA
ISSN
0149-645X
Print_ISBN
978-1-4673-6177-4
Type
conf
DOI
10.1109/MWSYM.2013.6697422
Filename
6697422
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