Title :
245 GHz subharmonic receiver in SiGe
Author :
Yanfei Mao ; Schmalz, K. ; Borngraber, Johannes ; Scheytt, J. Christoph ; Meliani, Chafik
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A subharmonic receiver for 245 GHz spectroscopy sensor applications have been proposed. The receiver consists of a CB (common base) LNA, 2nd transconductance SHM (subharmonic mixer) and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 14.3 dB at 245 GHz with tuning range of 15 GHz, and the single-side band noise figure is 19 dB. The input 1-dB compression point is at -24 dBm. The receiver dissipates a power of 200 mW.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; dividing circuits; low noise amplifiers; mixers (circuits); voltage-controlled oscillators; 2nd transconductance SHM; BiCMOS technology; CB LNA; SiGe; common base LNA; divider; frequency 120 GHz; frequency 15 GHz; frequency 245 GHz; gain 14.3 dB; noise figure 19 dB; power 200 mW; push-push VCO; single-side band noise figure; spectroscopy sensor applications; subharmonic mixer; subharmonic receiver; Frequency conversion; Frequency measurement; Gain; Radio frequency; Receivers; Transconductance; Voltage-controlled oscillators; 245 GHz; 2nd transconductance SHM; CB; SiGe; VCO;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697429
