245 GHz SiGe transmitter with integrated antenna and external PLL

Author

Schmalz, K. ; Ruoyu Wang ; Borngraber, Johannes ; Debski, W. ; Winkler, Wolfgang ; Meliani, Chafik

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A 245 GHz transmitter (TX) with an integrated antenna for sensing applications has been realized, which consists of a push-push VCO with a 1/64 frequency divider, a transformer-coupled one-stage power amplifier, a frequency doubler, and an on-chip antenna with localized backside etching. The frequency of the TX is tunable by an external PLL in the range from 239.5 GHz to 250.8 GHz. The TX is fabricated in 0.13 μm SiGe:C BiCMOS technology with f_T/f_max of 300GHz/500GHz. The output power of the TX is 1 dBm at 245 GHz. The TX including the frequency divider dissipates 0.38 W. The EIRP of the transmitter with antenna was measured using an external receive horn antenna. The EIRP reaches about 7 dBm at 245 GHz. This value represents the highest EIRP reported for a 245 GHz transmitter with integrated single antenna so far.

Keywords

CMOS integrated circuits; horn antennas; power amplifiers; transmitting antennas; C BiCMOS technology; SiGe transmitter; external PLL; external receive horn antenna; frequency 239.5 GHz to 250.8 GHz; frequency 245 GHz; frequency 300 GHz to 500 GHz; frequency divider; frequency doubler; gain 1 dB; gain 7 dB; integrated single antenna; onchip antenna; power amplifier; push-push VCO; sensing applications; Antenna measurements; Frequency conversion; Power amplifiers; Silicon germanium; Transmitting antennas; 245 GHz; SiGe; VCO; frequency doubler; integrated antenna; mm-wave; power amplifier; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697430

Filename

6697430