Advances in LDMOS Compact Modeling for IC Design: The SP-HV Model and Its Capabilities

Author

McAndrew, Colin C. ; Lorenzo-Cassagnes, Alexandra ; Goyhenetche, Philippe ; Pigott, John ; Wei Yao ; Gildenblat, Gennady ; Victory, James

Author_Institution

Freescale Semicond. Inc., Phoenix, AZ, USA

Volume

6

Issue

2

fYear

2014

fDate

Spring 2014

Firstpage

35

Lastpage

46

Abstract

Lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors are key interfaces between digital CMOS circuits and the real analog world; they are widely used in high-voltage and high-current applications, but they can be exceedingly difficult to model accurately. This article reviews recent advances in the compact modeling of LDMOS transistors, with an emphasis on the surface-potential-based high-voltage MOS (SP-HV) model and its capabilities. Detailed physical analysis of experimentally observed complexities in LDMOS behavior are reviewed and the relevance to IC design of the advanced modeling capabilities of SP-HV are detailed.

Keywords

CMOS digital integrated circuits; MOSFET; Tutorials; integrated circuit design; semiconductor device models; LDMOS compact modeling; SP-HV model; digital CMOS circuits; integrated circuit design; lateral double diffused metal-oxide-semiconductor transistors; surface potential-based high-voltage MOS; Integrated circuit modeling; Integrated circuit synthesis; Logic gates; MOS integrated circuits; MOSFET; Radio frequency; Semiconductor device modeling; Switching circuits; Tutorials;

fLanguage

English

Journal_Title

Solid-State Circuits Magazine, IEEE

Publisher

ieee

ISSN

1943-0582

Type

jour

DOI

10.1109/MSSC.2014.2313713

Filename

6841792