A triple-stacked Class-E mm-wave SiGe HBT power amplifier

Author

Datta, Kanak ; Roderick, Jonathan ; Hashemi, Hossein

Author_Institution

Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A Q-band, single ended, two-stage, triple-stacked, Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. The Class-E amplifier comprises of three series-stacked HBTs with capacitive divider networks at the HBT bases and collectors to ensure proper large signal swing and beyond BVCEO operation at mm-wave frequencies. The measured performance of the fabricated chip show 22.2 dBm maximum output power at 20.8% peak power added efficiency, and 15.4 dB of power gain across 4 GHz centered around 40 GHz for a supply voltage of 6.5 V. The total chip area including the pads is 0.8 mm × 1.28 mm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; millimetre wave power amplifiers; SiGe; SiGe HBT BiCMOS process; SiGe HBT power amplifier; class-E mm-wave power amplifier; divider networks; size 0.13 mum; triple-stacked power amplifier; voltage 6.5 V; Capacitance; Heterojunction bipolar transistors; Power generation; Power measurement; Semiconductor device measurement; Silicon germanium; BVCEO; Power Amplifier (PA); Q-band; Silicon Germanium (SiGe) HBT; class-E; millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697457

Filename

6697457