Title :
A low-voltage low-power low-phase-noise wide-tuning-range 0.18-μm CMOS VCO with high-performance FOMT of −196.3 dBc/Hz
Author :
To-Po Wang ; Shih-Yu Wang
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
This paper presents a low-voltage low-power low-phase-noise wide-tuning-range VCO in 0.18-μm CMOS. By using analog tuning varactors connected between the drain and source terminations of a cross-coupled pair, and combined with digital switching capacitor banks, the VCO tuning range can be effectively boosted. Moreover, inductors are utilized on top of a cross-coupled pair for enhancing the negative conductance (-Gm) and resonate the parasitic capacitors. This design methodology can easily overcome a VCO´s start-up condition. Based on the proposed architecture, the fabricated 0.18-μm CMOS VCO exhibits a measured 47.7% tuning range. Operating at 0.65-V low supply voltage, the VCO core consumes 2.99-mW dc power. At this bias condition, the measured phase noise is -115.6 dBc/Hz at 1-MHz offset from a 4.0-GHz oscillation frequency. Compared to recently published VCOs in C band, the proposed VCO can simultaneously achieve low supply voltage, low dc power dissipation, low phase noise, and wide tuning range, leading to a superior figure of merit considering the tuning range (FOMT = -196.3 dBc/Hz).
Keywords :
CMOS integrated circuits; switched capacitor networks; varactors; voltage-controlled oscillators; CMOS VCO; analog tuning varactors; cross-coupled pair; digital switching capacitor banks; frequency 4.0 GHz; low dc power dissipation; low phase noise; low supply voltage; low-power wide-tuning-range; negative conductance; parasitic capacitors; size 0.18 mum; voltage 0.65 V; CMOS integrated circuits; Frequency measurement; Phase noise; Tuning; Varactors; Voltage measurement; Voltage-controlled oscillators; Negative conductance (-Gm); voltage-controlled oscillator (VCO);
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697472