Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing

Author

Tiecheng Li ; Congxiao Liu ; Jihong Chen ; Guoliang Peng ; Fengfeng Luo ; Wen Wen ; Jing Zhang ; Liping Guo

Author_Institution

Key Lab. of Artificial Micro- & Nano-Struct., Wuhan Univ., Wuhan, China

Volume

51

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1

Lastpage

4

Abstract

Mn-implanted Si with postannealing treatment at 873, 973, 1073, and 1173 K exhibited ferromagnetism at room temperature. Ferromagnetism was enhanced as the annealing temperature increased. The largest value of saturation magnetization was found in the sample annealed at 1173 K. X-ray absorption near-edge structure spectra showed no formation of substitutiona-interstitial Mn-Mn dimmers in all samples. On the other hand, high-resolution transmission electron microscopy and glancing incidence X-ray diffraction revealed a variety of MnSi compounds. We propose that the ferromagnetism has the origin from the MnSi1.7 nanoparticles as well as the MnSi 1:1 phase, which possesses strong short-range spin correlation. The formation of antiferromagnetic Mn₅Si₃ compound in 873 and 973 K annealed samples substantially reduced the magnetism. This paper provides new insights into the understanding of ferromagnetism in Mn-implanted Si diluted magnetic semiconductors.

Keywords

X-ray diffraction; XANES; annealing; antiferromagnetic materials; elemental semiconductors; ferromagnetic materials; high-temperature effects; magnetic particles; magnetisation; manganese; nanomagnetics; nanoparticles; semimagnetic semiconductors; silicon; transmission electron microscopy; Si:Mn; X-ray absorption near-edge structure spectra; antiferromagnetic compound; diluted magnetic semiconductors; glancing incidence X-ray diffraction; high-resolution transmission electron microscopy; high-temperature annealing; manganese-implanted silicon diluted magnetic semiconductors; nanoparticles; postannealing treatment; room-temperature ferromagnetism; saturation magnetization; short-range spin correlation; temperature 1073 K; temperature 1173 K; temperature 293 K to 298 K; temperature 873 K; temperature 973 K; Annealing; Magnetic flux; Manganese; Nanoparticles; Saturation magnetization; Silicon; Temperature measurement; Diluted magnetic semiconductors (DMSs); Mn-implanted Si; diluted magnetic semiconductors; room temperature ferromagnetism; room-temperature ferromagnetism; short-range spin correlation;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2014.2375852

Filename

6971176