A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS

Author

Gathman, Timothy D. ; Buckwalter, James F.

Author_Institution

Qualcomm Technol., Inc., San Diego, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

A voltage-controlled traveling wave oscillator is proposed for deterministic quadrature phase generation. This oscillator topology contains four traveling-wave gain stages that provide 360^o phase shift around transmission line ring. The oscillator has a center frequency of 92 GHz and a tuning range of 1.3 GHz. The constructive-wave oscillator is fabricated in a 120-nm SiGe BiCMOS process and occupies a total area of 0.65 × 0.67 mm² with a power consumption of 32mW.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; modulators; voltage-controlled oscillators; N-push modulator; SiGe; SiGe BiCMOS; constructive-wave oscillator; deterministic quadrature oscillator; deterministic quadrature phase generation; frequency 1.3 GHz; frequency 92 GHz; oscillator topology; power 32 mW; power consumption; size 120 nm; transmission line ring; traveling-wave gain stages; voltage-controlled traveling wave oscillator; Delays; Frequency measurement; Gain; Harmonic analysis; Oscillators; Power transmission lines; Tuning; Quadrature oscillator; SiGe bipolar; frequency tuning range; harmonic; modulator; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697510

Filename

6697510