Title :
Stacked FET structure for multi-band mobile terminal power amplifier module
Author :
Motoyama, Hideki ; Jingu, Yoshikatsu ; Kimura, Tomohiro ; Lawrenson, A. ; Clifton, J.C.
Author_Institution :
Device Solutions Bus. Group, Sony Corp., Kanagawa, Japan
Abstract :
A multi-band PHEMT 5 × 7 mm2 PA module for mobile applications is described based upon a stacked FET structure. The PA has 28.5 dBm linear output power and over 40 % PAE with -38 dBc ACLR for a 3.2 V supply voltage, covering a wide frequency range of 698-915 MHz, 1430-1450 MHz and 1710-1980 MHz. A Stacked FET structure and the method to align voltage phase of stacked FETs are described. The module contains two PA chips, one output switch and MIPI RFFE interface compatible PA and SW controller.
Keywords :
UHF field effect transistors; UHF power amplifiers; high electron mobility transistors; MIPI RFFE interface; frequency 1430 MHz to 1450 MHz; frequency 1710 MHz to 1980 MHz; frequency 698 MHz to 915 MHz; mobile applications; multiband PHEMT; multiband mobile terminal power amplifier module; stacked FET structure; voltage 3.2 V; voltage phase; Field effect transistors; Impedance; Logic gates; Power amplifiers; Power generation; Radio frequency; Switches; Broadband amplifiers; Gallium arsenide; HEMTs; Power amplifiers; Switching circuits; Wideband;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697530
